Power Device Analyzer IGBT Mosfet Static Test Solutions SiC MOSFET GaN Hemt DC power supply Semiconductor Curve Tracer Equivalent with B1505A
Introduction
The power device static parameter test system integrates various measurement and analysis functions, and can accurately measure the static parameters of power devices (MOSFET, BJT, IGBT, etc.), the voltage can be as high as 3.5KV, and the current can be as high as 6KA. The system can measure the static parameters of power devices of different package types, and has the characteristics of high voltage and high current, uΩ-level resistance, and pA-level current accurate measurement. Support the measurement of junction capacitance of power devices in high voltage mode, such as input capacitance, output capacitance, reverse transfer capacitance, etc.
Characteristics
- High voltage: support up to 3.5KV high voltage test;
- High current: support up to 6KA high current test;
- High precision: support uΩ-level resistance, pA-level current, and uV-level precision measurement;
- Rich templates: Built-in rich test templates, which are convenient for users to quickly configure test parameters;
- Configuration export: support one-key export parameter configuration and one-key start test function;
- Data preview and export: support graphical interface and table display test results, and one-click export;
- Modular design: The interior adopts modular structure design, which can be freely configured and easy to maintain;
- Expandable: support the expansion of temperature control function, which is convenient for monitoring the operating temperature of the system;
- Customizable development: It can be customized and developed according to user test scenarios;
Technical Parameters
| PMST system configuration |
Key parameters |
remarks |
| P series SMU |
PW reach 30V/10A,300V/1A |
Gate characteristic test |
| CW reach 300V/0.1A,30V/1A |
| Min pulse width 200uS |
| HCP series high current pulsed SMU |
PW reach 30V/100A |
IGBT turn-on voltage drop, diode instantaneous forward voltage test |
| CW reach 10V/30A |
| Min resolution 30uV/10pA |
| Min pulse width 80uS |
| HCPL series high current pulsed source |
Single PW reach12V/1000A, support multi-sets in parallel. |
| Min pulse width 50uS |
E series high voltage source
E series high voltage source |
CW reach 3000V/100mA |
IGBT breakdown voltage test |
| Min resolution 10mV/100pA |
| Measurement accuracy 0.1% |
| bridge |
Frequency Range:20Hz~1MHz |
voltage test between IGBT stages |
HVP series supply DC bias voltage 0~400V;
S series supply DC bias voltage 0~30V |
| Preset Bias Resistor 100kΩ |
| matrix switch |
/ |
circuit switch & sourcemeter switch |
| Control PC |
/ |
|
| Test fixture |
Customized according to device package form |
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Applications:
Power devices such as diodes, triodes, MOSFET, IGBTs, SICs, GaN;
Compositions:
Factory:
FAQ:
1. Q:Precise is direct factory or trade company?
A: Precise is a factory, and all the SMU R&D are Precise team and manufactured by Precise.
2. Q:Sample order is available?
A:Yes, we accept sample order.
3. Q:Do you supply software for SMU operation?
A:Yes, we can design it as customer's requirement.
4. Q:whats the delivery period?
A:usually, it is around 30 days, and it is also related with order qty.
5. Q:what's the warranty?
A:warranty is 12 month.
6.Q: what's the shipping way?
A:for sample order, usually shipping by international express like DHL, FEDEX, UPS, EMS and so on. If qty is more, by air is also a good choice.
Audited Supplier 
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